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| 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3880 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 30 6.5 19.5 80 375 6.5 8 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16F1B 2 Weight: 5.8 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 C/W C/W 3 Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.1 mH, RG = 25 , IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-01-18 2SK3880 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min 30 800 2.0 2.5 Typ. 1.35 5.2 1500 25 140 35 Max 10 100 4.0 1.7 pF Unit A V A V V S 10 V VGS 0V 50 VOUT ns Turn-on time Switching time Fall time ton RL= 114 VDD 400 V - 80 tf Duty < 1%, tw = 10 s = 50 nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6.5 A - 220 35 22 13 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 11.5 Max 6.5 19.5 -1.7 Unit A A V ns C Marking TOSHIBA K3880 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-18 2SK3880 5 COMMON SOURCE Common source TcTc =25C 25C Pulse testTEST PULSE ID - VDS 8,10 6 5.5 10 ID - VDS 8,10 6 COMMON SOURCE Tc = 25C PULSE TEST (A) (A) 4 8 5.75 6 DRAIN CURRENT ID 3 5.25 DRAIN CURRENT ID 5.5 4 2 5 5.25 5 1 VGS=4.5V 0 0 2 4 6 DRAIN-SOURCE VOLTAGE 8 10 2 VGS=4.5V 0 0 10 20 30 40 VDS (V) 50 VDS (V) DRAIN-SOURCE VOLTAGE ID - VGS 16 Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test 12 PULSE TEST 20 (V) VDS - VGS COMMON SOURCE Common source Tc = 25C Ta=25 PULSE TEST Pulse test DRAIN CURRENT ID DRAIN-SOURCE VOLTAGE VDS (A) 16 12 ID=7A 8 8 3.5 4 Ta=100 -55 25 4 1.5 0 0 2 4 6 VGS 0 8 (V) 10 0 GATE-SOURCE VOLTAGE 4 8 12 16 GATE-SOURCE VOLTAGE VGS (V) 20 100 FORWARD TRANSFER ADMITTANCE Yfs (S) Yfs - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () RDS (ON) - ID 10.00 Common source COMMON SOURCE V = =10V VGS GS10 V Tc =Tc=25 25C PULSE TEST Pulse test Common source COMMON SOURCE VDS=20V VDS = 20 V Pulse test PULSE TEST 10 -55 25 1.00 Ta=100 1 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) 0.10 0.01 0.1 1 DRAIN CURRENT ID (A) 10 3 2005-01-18 2SK3880 5 DRAIN-SOURCE ON RESISTANCE RDS (ON) () RDS (ON) - Tc DRAIN REVERSE CURRENT IDR (A) 10 COMMON SOURCE Common source Tc = 25C Tc=25 PULSE TEST Pulse test IDR - VDS 4 Common source COMMON SOURCE V = =10V VGS GS10 V PULSE TEST Pulse test 7 3 3 2 ID=1.5A 1 1 3 10 VGS=0-1V 1 0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 DRAIN-SOURCE VOLTAGE VDS (V) 10000 CAPACITANCE - VDS (V) 5 Vth - Tc Vth GATE THRESHOLD VOLTAGE Ciss C (pF) 4 1000 Coss 3 CAPACITANCE 100 2 COMMON SOURCE VDS = 10 V ID = 1 mA Common source VGS = 0 V V GS=0V f = 1 MHz f=1MHz Tc = 25C Tc=25 10 0.1 COMMON SOURCE Crss 1 Common source VDS=10V ID=1mA PULSE TEST Pulse test -40 1 DRAIN-SOURCE VOLTAGE 10 VDS (V) 100 0 -80 0 40 80 CASE TEMPERATURE Tc 120 (C) 160 120 PD (W) PD - Tc (V) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 20 100 80 60 40 20 0 0 40 80 Tc VDS 400 V DS VDD=100V 16 DRAIN POWER DISSIPATION DRAIN-SOURCE VOLTAGE 300 200V 400V COMMON SOURCE Common source 12 200 8 100 ID=6.5A ID = 6.5 A Tc = 25C Tc=25 Pulse test 4 PULSE TEST 0 0 20 40 60 0 120 (C) 160 CASE TEMPERATURE TOTAL GATE CHARGE Qg (nC) 4 2005-01-18 GATE-SOURCE VOLTAGE VGS (V) 2SK3880 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 0.1 0.01 Duty = 0.5 0.2 0.1 0.0 0.0 0.0 SINGLE PULSE PDM t DUTY = t/T 0.001 0.00001 th (ch-c) = 1.56C/W 0.0001 0.001 0.01 tw (S) 0.1 1 10 PULSE WIDTH SAFE OPERATING AREA 100 ID MAX (PULSED) 100 s* EAS - Tch 400 (mJ) AVALANCHE ENERGY EAS 350 300 250 200 150 100 50 0 25 50 75 100 125 (C) (A) 10 ID MAX (CONTINUOUS) 1 ms* DRAIN CURRENT ID 1 DC OPERATION T = 25C c 0.1 * SINGLE NONREPETITIVE PULSE Tc = 25C Curves must be derated linearly with increase in temperature 150 VDSS MAX CHANNEL TEMPERATURE (INITIAL) Tch 0.01 1 10 DRAIN-SOURCE VOLTAGE 100 VDS (V) 1000 15 V -15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 VDD = 90 V, L = 16.1 mH WAVE FORM AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2005-01-18 2SK3880 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 030619EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-01-18 |
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